ATP101 MOSFET Transistor

The ATP101 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ATP101 transistor as follows.

ATP101 Transistor Specification

Transistor Code		ATP101
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		ATPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	30W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		18.5nC

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