APT8075BVR MOSFET Transistor

The APT8075BVR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT8075BVR transistor as follows.

APT8075BVR Transistor Specification

Transistor Code		APT8075BVR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	260W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS

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