APT8030JN MOSFET Transistor

The APT8030JN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT8030JN transistor as follows.

APT8030JN Transistor Specification

Transistor Code		APT8030JN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	520W
Drain-Source Capacitance		725pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Total Gate Charge		245nC

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