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APT8018L2VR MOSFET Transistor

The APT8018L2VR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT8018L2VR transistor as follows.

Circuit diagram symbol of the APT8018L2VR transistor

APT8018L2VR Transistor Specification

Transistor Code APT8018L2VR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO264
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 43A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 830W
Drain-Source Capacitance 1090pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Total Gate Charge 610nC

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