APT8018L2VFR MOSFET Transistor

The APT8018L2VFR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT8018L2VFR transistor as follows.

APT8018L2VFR Transistor Specification

Transistor Code		APT8018L2VFR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO264
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	43A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	833W
Drain-Source Capacitance		1180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS

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