APT8018JN MOSFET Transistor

The APT8018JN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT8018JN transistor as follows.

APT8018JN Transistor Specification

Transistor Code		APT8018JN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	690W
Drain-Source Capacitance		1430pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		4V

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