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APT60M80L2VR MOSFET Transistor

The APT60M80L2VR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT60M80L2VR transistor as follows.

Circuit diagram symbol of the APT60M80L2VR transistor

APT60M80L2VR Transistor Specification

Transistor Code APT60M80L2VR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO264
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 65A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.08Ohm
Power Dissipation (Maximum) PD 830W
Drain-Source Capacitance 1450pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS

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