APT6035BVFR MOSFET Transistor

The APT6035BVFR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT6035BVFR transistor as follows.

APT6035BVFR Transistor Specification

Transistor Code		APT6035BVFR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	280W
Drain-Source Capacitance		403pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS

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