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APT6015B2VR MOSFET Transistor

The APT6015B2VR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT6015B2VR transistor as follows.

Circuit diagram symbol of the APT6015B2VR transistor

APT6015B2VR Transistor Specification

Transistor Code APT6015B2VR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 38A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 520W
Drain-Source Capacitance 900pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS
Total Gate Charge 315nC

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