APT6011B2VR MOSFET Transistor

The APT6011B2VR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT6011B2VR transistor as follows.

APT6011B2VR Transistor Specification

Transistor Code		APT6011B2VR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TMAX
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	49A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	625W
Drain-Source Capacitance		1100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Total Gate Charge		450nC

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