APT50M85B2VR MOSFET Transistor

The APT50M85B2VR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT50M85B2VR transistor as follows.

APT50M85B2VR Transistor Specification

Transistor Code		APT50M85B2VR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TMAX
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	625W
Drain-Source Capacitance		1160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Total Gate Charge		360nC

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