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APT50M60L2VR MOSFET Transistor

The APT50M60L2VR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT50M60L2VR transistor as follows.

Circuit diagram symbol of the APT50M60L2VR transistor

APT50M60L2VR Transistor Specification

Transistor Code APT50M60L2VR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO264
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 77A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 825W
Drain-Source Capacitance 1600pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS

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