APT5010B2VR MOSFET Transistor

The APT5010B2VR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT5010B2VR transistor as follows.

APT5010B2VR Transistor Specification

Transistor Code		APT5010B2VR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	47A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	520W
Drain-Source Capacitance		1000pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Total Gate Charge		312nC

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