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APT30M40B2VR MOSFET Transistor

The APT30M40B2VR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT30M40B2VR transistor as follows.

Circuit diagram symbol of the APT30M40B2VR transistor

APT30M40B2VR Transistor Specification

Transistor Code APT30M40B2VR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TMAX
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 76A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 520W
Drain-Source Capacitance 1500pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS

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