APT1201R6BVR MOSFET Transistor

The APT1201R6BVR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT1201R6BVR transistor as follows.

APT1201R6BVR Transistor Specification

Transistor Code		APT1201R6BVR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.6Ohm
Power Dissipation (Maximum)	PD	280W
Drain-Source Capacitance		255pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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