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APT1201R5BVFR MOSFET Transistor

The APT1201R5BVFR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT1201R5BVFR transistor as follows.

Circuit diagram symbol of the APT1201R5BVFR transistor

APT1201R5BVFR Transistor Specification

Transistor Code APT1201R5BVFR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 1200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 370W
Drain-Source Capacitance 320pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS

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