APT11N80BC3 MOSFET Transistor

The APT11N80BC3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT11N80BC3 transistor as follows.

APT11N80BC3 Transistor Specification

Transistor Code		APT11N80BC3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		770pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS

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