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APT10M25BVR MOSFET Transistor

The APT10M25BVR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT10M25BVR transistor as follows.

Circuit diagram symbol of the APT10M25BVR transistor

APT10M25BVR Transistor Specification

Transistor Code APT10M25BVR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.025Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 1600pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 22nS
Total Gate Charge 155nC

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