APT10M19BVR MOSFET Transistor

The APT10M19BVR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT10M19BVR transistor as follows.

APT10M19BVR Transistor Specification

Transistor Code		APT10M19BVR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	370W
Drain-Source Capacitance		1900pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS

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