APT10M09B2VFR MOSFET Transistor

The APT10M09B2VFR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT10M09B2VFR transistor as follows.

APT10M09B2VFR Transistor Specification

Transistor Code		APT10M09B2VFR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TMAX
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	625W
Drain-Source Capacitance		3730pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36nS

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