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APT10050B2VFR MOSFET Transistor

The APT10050B2VFR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT10050B2VFR transistor as follows.

Circuit diagram symbol of the APT10050B2VFR transistor

APT10050B2VFR Transistor Specification

Transistor Code APT10050B2VFR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TMAX
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 21A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.5Ohm
Power Dissipation (Maximum) PD 520W
Drain-Source Capacitance 595pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS

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