APT1001RBVFR MOSFET Transistor

The APT1001RBVFR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT1001RBVFR transistor as follows.

APT1001RBVFR Transistor Specification

Transistor Code		APT1001RBVFR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	278W
Drain-Source Capacitance		280pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Total Gate Charge		150nC

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