APT1001R2BN MOSFET Transistor

The APT1001R2BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT1001R2BN transistor as follows.

APT1001R2BN Transistor Specification

Transistor Code		APT1001R2BN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	310W
Operating Junction Temperature (Maximum)		150°C

UXPython is not the creator or an official representative of the APT1001R2BN MOSFET transistor. You can download the official APT1001R2BN MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IXFH86N30T MOSFET Transistor APT8075BVFR MOSFET Transistor RFG75N05E MOSFET Transistor IRFP250 MOSFET Transistor TA75333 MOSFET Transistor STW11NK90Z MOSFET Transistor IXFH24N90P MOSFET Transistor IXTH52P10P MOSFET Transistor STW70N10F4 MOSFET Transistor SPW07N60CFD MOSFET Transistor STW75NF30 MOSFET Transistor STW58NM60N MOSFET Transistor IXTH36N50P MOSFET Transistor IRFP460PBF MOSFET Transistor RFG40N10 MOSFET Transistor IXTH24N50MA MOSFET Transistor RFG45N06 MOSFET Transistor 2SK3681-01 MOSFET Transistor FDH210N08 MOSFET Transistor HUF75339G3 MOSFET Transistor