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APT1001R1HVR MOSFET Transistor

The APT1001R1HVR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT1001R1HVR transistor as follows.

Circuit diagram symbol of the APT1001R1HVR transistor

APT1001R1HVR Transistor Specification

Transistor Code APT1001R1HVR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO258
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.1Ohm
Power Dissipation (Maximum) PD 200W
Drain-Source Capacitance 280pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS

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