APS04N60H MOSFET Transistor

The APS04N60H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APS04N60H transistor as follows.

APS04N60H Transistor Specification

Transistor Code		APS04N60H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	620V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.5Ohm
Power Dissipation (Maximum)	PD	59.5W
Drain-Source Capacitance		70pF
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		4V

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