APQ84SN06A MOSFET Transistor

The APQ84SN06A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ84SN06A transistor as follows.

APQ84SN06A Transistor Specification

Transistor Code		APQ84SN06A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	84A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		687pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		75nS
Gate-Threshold Voltage (Maximum)		4V

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