APQ57SN10B MOSFET Transistor

The APQ57SN10B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ57SN10B transistor as follows.

APQ57SN10B Transistor Specification

Transistor Code		APQ57SN10B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	57A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	162W
Drain-Source Capacitance		717pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		473nS
Gate-Threshold Voltage (Maximum)		4V

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