APQ50SN06AD MOSFET Transistor

The APQ50SN06AD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ50SN06AD transistor as follows.

APQ50SN06AD Transistor Specification

Transistor Code		APQ50SN06AD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		320.7pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35.2nS
Gate-Threshold Voltage (Maximum)		4V

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