APQ4ESN50AB MOSFET Transistor

The APQ4ESN50AB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ4ESN50AB transistor as follows.

APQ4ESN50AB Transistor Specification

Transistor Code		APQ4ESN50AB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	38W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V

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