APQ39SN04AB MOSFET Transistor

The APQ39SN04AB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ39SN04AB transistor as follows.

APQ39SN04AB Transistor Specification

Transistor Code		APQ39SN04AB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	39A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		3V

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