APQ14SN65AH MOSFET Transistor

The APQ14SN65AH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ14SN65AH transistor as follows.

APQ14SN65AH Transistor Specification

Transistor Code		APQ14SN65AH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.65Ohm
Power Dissipation (Maximum)	PD	227W
Drain-Source Capacitance		217pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		29.6nS
Gate-Threshold Voltage (Maximum)		4V

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