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APQ14SN65AF MOSFET Transistor

The APQ14SN65AF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ14SN65AF transistor as follows.

Circuit diagram symbol of the APQ14SN65AF transistor

APQ14SN65AF Transistor Specification

Transistor Code APQ14SN65AF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 14A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.65Ohm
Power Dissipation (Maximum) PD 56W
Drain-Source Capacitance 217pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 29.6nS
Gate-Threshold Voltage (Maximum) 4V

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