APQ11BSN40A MOSFET Transistor

The APQ11BSN40A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ11BSN40A transistor as follows.

APQ11BSN40A Transistor Specification

Transistor Code		APQ11BSN40A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	147W
Drain-Source Capacitance		181pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		101nS
Gate-Threshold Voltage (Maximum)		4V

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