APQ110SN5EAH MOSFET Transistor

The APQ110SN5EAH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ110SN5EAH transistor as follows.

APQ110SN5EAH Transistor Specification

Transistor Code		APQ110SN5EAH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		1006pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		56.3nS
Gate-Threshold Voltage (Maximum)		4V

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