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APQ10SN65AH MOSFET Transistor

The APQ10SN65AH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ10SN65AH transistor as follows.

Circuit diagram symbol of the APQ10SN65AH transistor

APQ10SN65AH Transistor Specification

Transistor Code APQ10SN65AH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.9Ohm
Power Dissipation (Maximum) PD 162W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 70nS
Gate-Threshold Voltage (Maximum) 4V

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