APQ10SN60AH MOSFET Transistor

The APQ10SN60AH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ10SN60AH transistor as follows.

APQ10SN60AH Transistor Specification

Transistor Code		APQ10SN60AH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		162pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32.3nS
Gate-Threshold Voltage (Maximum)		4V

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