APQ0DSN60AJ MOSFET Transistor

The APQ0DSN60AJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ0DSN60AJ transistor as follows.

APQ0DSN60AJ Transistor Specification

Transistor Code		APQ0DSN60AJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8.9Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		12pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		4V

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