APQ0CSN60A MOSFET Transistor

The APQ0CSN60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ0CSN60A transistor as follows.

APQ0CSN60A Transistor Specification

Transistor Code		APQ0CSN60A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	15Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		19pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		4V

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