APQ08SN50BE MOSFET Transistor

The APQ08SN50BE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ08SN50BE transistor as follows.

APQ08SN50BE Transistor Specification

Transistor Code		APQ08SN50BE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	134W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		4V

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