APQ07SN80BH MOSFET Transistor

The APQ07SN80BH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ07SN80BH transistor as follows.

APQ07SN80BH Transistor Specification

Transistor Code		APQ07SN80BH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.55Ohm
Power Dissipation (Maximum)	PD	154W
Drain-Source Capacitance		104pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		72nS
Gate-Threshold Voltage (Maximum)		4V

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