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APQ06SN60A MOSFET Transistor

The APQ06SN60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ06SN60A transistor as follows.

Circuit diagram symbol of the APQ06SN60A transistor

APQ06SN60A Transistor Specification

Transistor Code APQ06SN60A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 70pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 47nS
Gate-Threshold Voltage (Maximum) 4V

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