APQ04SN60CH MOSFET Transistor

The APQ04SN60CH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ04SN60CH transistor as follows.

APQ04SN60CH Transistor Specification

Transistor Code		APQ04SN60CH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.3Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		67pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		4V

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