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APQ04SN60CB MOSFET Transistor

The APQ04SN60CB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ04SN60CB transistor as follows.

Circuit diagram symbol of the APQ04SN60CB transistor

APQ04SN60CB Transistor Specification

Transistor Code APQ04SN60CB
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.3Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 67pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 36nS
Gate-Threshold Voltage (Maximum) 4V

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