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APQ04SN60AF MOSFET Transistor

The APQ04SN60AF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ04SN60AF transistor as follows.

Circuit diagram symbol of the APQ04SN60AF transistor

APQ04SN60AF Transistor Specification

Transistor Code APQ04SN60AF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.3Ohm
Power Dissipation (Maximum) PD 33W
Drain-Source Capacitance 67pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS
Gate-Threshold Voltage (Maximum) 4V

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