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APQ02SN65AB MOSFET Transistor

The APQ02SN65AB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ02SN65AB transistor as follows.

Circuit diagram symbol of the APQ02SN65AB transistor

APQ02SN65AB Transistor Specification

Transistor Code APQ02SN65AB
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 5.5Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 32pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13.9nS
Gate-Threshold Voltage (Maximum) 4V

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