APQ02SN65AB MOSFET Transistor

The APQ02SN65AB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ02SN65AB transistor as follows.

APQ02SN65AB Transistor Specification

Transistor Code		APQ02SN65AB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5.5Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		32pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13.9nS
Gate-Threshold Voltage (Maximum)		4V

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