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APQ02SN60A MOSFET Transistor

The APQ02SN60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ02SN60A transistor as follows.

Circuit diagram symbol of the APQ02SN60A transistor

APQ02SN60A Transistor Specification

Transistor Code APQ02SN60A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.4Ohm
Power Dissipation (Maximum) PD 54W
Drain-Source Capacitance 45pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5.6nS
Gate-Threshold Voltage (Maximum) 4V

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