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APQ01SN60AA MOSFET Transistor

The APQ01SN60AA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ01SN60AA transistor as follows.

Circuit diagram symbol of the APQ01SN60AA transistor

APQ01SN60AA Transistor Specification

Transistor Code APQ01SN60AA
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 9.3Ohm
Power Dissipation (Maximum) PD 20W
Drain-Source Capacitance 20pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5.7nS
Gate-Threshold Voltage (Maximum) 4V

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