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APM1106K MOSFET Transistor

The APM1106K is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APM1106K transistor as follows.

Circuit diagram symbol of the APM1106K transistor

APM1106K Transistor Specification

Transistor Code APM1106K
Transistor Type MOSFET
Control Channel Type NP-Channel
Package SOP-8
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.22Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 2.6V

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