AP9T19GJ MOSFET Transistor

The AP9T19GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9T19GJ transistor as follows.

AP9T19GJ Transistor Specification

Transistor Code		AP9T19GJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		690pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		85nS

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