AP9T18GEH MOSFET Transistor

The AP9T18GEH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9T18GEH transistor as follows.

AP9T18GEH Transistor Specification

Transistor Code		AP9T18GEH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	31W
Drain-Source Capacitance		205pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		84nS

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